The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2006

Filed:

Oct. 28, 2003
Applicants:

Danilo Mascolo, Ercolano, IT;

Rossana Scaldaferri, Sapri, IT;

Teresa Napolitano, Cimitile, IT;

Valeria Casuscelli, Arzano, IT;

Luigi Occhipinti, Catania, IT;

Inventors:

Danilo Mascolo, Ercolano, IT;

Rossana Scaldaferri, Sapri, IT;

Teresa Napolitano, Cimitile, IT;

Valeria Casuscelli, Arzano, IT;

Luigi Occhipinti, Catania, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method manufactures a single electron transistor device by electro-migration of nanocluster wherein said nanoclusters are metallically passivated and forced to assembly over a lithographic patterned substrate under control of a non homogeneous electric field at room temperature. A controlled migration and the desired location of the metallic passivated nanoclusters are based on a dielectrophoretic process.


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