The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Jun. 28, 2004
Applicants:
Jin Young Kim, Gyeonggi-Do, KR;
Chang Ho Noh, Gyeonggi-Do, KR;
Euk Che Hwang, Gyeonggi-Do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed herein are a method for forming a pattern of a one-dimensional nanostructure, and a pattern of a one-dimensional nanostructure formed by the method. The method comprises the steps of (i) coating a photocatalytic compound onto a substrate to form a photocatalytic film, and selectively exposing the photocatalytic film to light to form latent image centers for crystal growth, (ii) growing metal crystals by plating the latent pattern to form a metal pattern, and (iii) selectively growing a one-dimensional nanostructure on the metal pattern acting as a catalyst.