The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Oct. 05, 2002
Applicant:
Susana Curatolo, Lawrence, KS (US);
Inventor:
Susana Curatolo, Lawrence, KS (US);
Assignee:
CZT Inc., Lawrence, KS (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a single crystalline structure having a substantially linear response at least over the wave lengths of 1,200 to 1,700 nanometers, the resulting structure and its use as an optical media or a barrier coating. Thus, maximum obtainable optical transmission with zero attenuation is provided. There is no intrinsic material absorption.
Quick Actions:
Curatolo, Susana. (2006). Oh and h resistant silicon material (U.S. Patent No. 7067006). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7067006
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile