The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
May. 19, 2003
Ming-dou Ker, Hsinchu, TW;
Wen-yu Lo, Taichung Hsien, TW;
Ming-Dou Ker, Hsinchu, TW;
Wen-Yu Lo, Taichung Hsien, TW;
Silicon Integrated Systems Corp., Hsinchu, TW;
Abstract
An ESD protection circuit with tunable gate-bias coupled between a first and second pads for receiving power supply voltages. The ESD protection circuit includes a diode, a resistor coupled between the cathode of the diode and the first pad, a capacitor coupled between the cathode of the diode and the second pad, a first transistor of a first conductivity type having a gate coupled to the cathode of the diode, a drain coupled to the anode of the diode and a source coupled to the second pad, a second transistor of a second conductivity type having a gate coupled to the cathode of the diode, a drain coupled to the anode of the diode and a source coupled to the first pad, and a third transistor of the first conductivity type having a gate coupled to the anode of the diode, a drain coupled to the first pad and a source coupled to the second pad.