The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Feb. 20, 2004
Ying-hsin LI, Kaohsiung, TW;
Sheng-chieh Yang, Taoyuan, TW;
An Shih, Changhua, TW;
Ming-dou Ker, Hsinchu, TW;
Tang-kui Tseng, Hsinchu, TW;
Chih-kang Deng, Taipei, TW;
Ying-Hsin Li, Kaohsiung, TW;
Sheng-Chieh Yang, Taoyuan, TW;
An Shih, Changhua, TW;
Ming-Dou Ker, Hsinchu, TW;
Tang-Kui Tseng, Hsinchu, TW;
Chih-Kang Deng, Taipei, TW;
Toppoly Optoelectronics Corp., Chu-Nan, TW;
Abstract
A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer is formed on a substrate. A first region of a first carrier concentration is formed in the semiconductor layer. A second region of a second carrier concentration is formed in the semiconductor layer. An insulator is formed on the semiconductor layer. The insulator layer is etched to form at least a contact window. The contact window exposes a portion of an upper surface of the semiconductor layer. A metal layer is formed on the insulator layer. The metal layer fills up the contact window to contact the semiconductor layer.