The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
May. 15, 2002
Chihiro Arai, Kanagawa, JP;
Chihiro Arai, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a bipolar transistor formed on a semiconductor substrate, in which a collector regionis formed on the semiconductor substrate; a first insulating layerhaving a first openingformed in a collector regionis formed on the surface of the semiconductor substrate; and a base semiconductor layerB is formed in contact with the collector region through the first opening. The base semiconductor layerB is formed such that the edge thereof extends onto the first insulating layer. An emitter semiconductor layerE is formed in a predetermined region on the base semiconductor layer; a second insulating layeris formed on the first insulating layercovering the edge of the base semiconductor layerE; a second openingwhich opens the contact portion between the emitter semiconductor layerE and the base semiconductor layerB and a third openingwhich opens a base electrode take-out portion of the base semiconductor layerB are formed; and a metal silicide layeris formed on the surface of the aforementioned base semiconductor layer inside the third opening. A metal silicide layer can be formed in a self-aligned manner in a semiconductor device including a bipolar transistor, and silicide in other semiconductor elements can also be formed being self-aligned.