The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Jun. 22, 2004
Tae-ho Jang, Gyeonggi-do, KR;
Tae-Ho Jang, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A silicon-on-insulator (SOI) substrate includes a silicon substrate including an active region defined by a field region that surrounds the active region for device isolation. The field region includes a first oxygen-ion-injected isolation region and a second oxygen-ion-injected isolation region. The first oxygen-ion-injected isolation region has a first thickness and is disposed under the active region, a center of the first oxygen-ion-injected isolation region being at a first depth from a top surface of the silicon substrate. The second oxygen-ion-injected isolation region has a second thickness that is greater than the first thickness, the second oxygen-ion-injected isolation region disposed at sides of the active region and formed from a ton surface of the silicon substrate, a center of the second oxygen-ion-injected region disposed at a second depth from the top surface of the silicon substrate.