The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Jun. 25, 2003
Keisuke Yonehama, Mie-ken, JP;
Eiji Sakagami, Mie-ken, JP;
Hiromasa Fujimoto, Kanagawa-ken, JP;
Naoki Koido, Kanagawa-ken, JP;
Keisuke Yonehama, Mie-ken, JP;
Eiji Sakagami, Mie-ken, JP;
Hiromasa Fujimoto, Kanagawa-ken, JP;
Naoki Koido, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory device, including a first memory cell having a first gate electrode, a first diffusion layer, and a second diffusion layer; a first contact layer connected to the first diffusion layer of the first memory cell; a second contact layer connected to the first contact layer; a second memory cell having a second gate electrode, a third diffusion layer and a fourth diffusion layer, the second gate electrode of the second memory cell electrically connected to the first gate electrode of the first memory cell, the first and second memory cells arranged in a direction perpendicular to the first bit line; and a conductive layer commonly connected to the second diffusion layer of the first memory cell and the fourth diffusion layer of the second memory cell, a height of the conductive layer substantially being coplanar with a height of the first contact layer.