The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Jun. 21, 2004
Narayan Solayappan, Colorado Springs, CO (US);
Jolanta Celinska, Colorado Springs, CO (US);
Vikram Joshi, Colorado Springs, CO (US);
Carlos A. Paz DE Araujo, Colorado Springs, CO (US);
Larry D. Mcmillan, Colorado Springs, CO (US);
Narayan Solayappan, Colorado Springs, CO (US);
Jolanta Celinska, Colorado Springs, CO (US);
Vikram Joshi, Colorado Springs, CO (US);
Carlos A. Paz de Araujo, Colorado Springs, CO (US);
Larry D. McMillan, Colorado Springs, CO (US);
Symetrix Corporation, Colorado Springs, CO (US);
Abstract
A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.