The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Dec. 06, 2004
Yoshihiro Yokota, Kobe, JP;
Nobuyuki Kawakami, Kobe, JP;
Takeshi Tachibana, Kobe, JP;
Kazushi Hayashi, Kobe, JP;
Yoshihiro Yokota, Kobe, JP;
Nobuyuki Kawakami, Kobe, JP;
Takeshi Tachibana, Kobe, JP;
Kazushi Hayashi, Kobe, JP;
Kabushiki Kaisha Kobe Seiko Sho, Hyogo, JP;
Abstract
A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the impurity, the second diamond layer being placed on the substrate and spaced from the first diamond layer; and a third diamond layer which has a impurity content less than that of the first and second diamond layers, which acts as a channel region, and through which charges are transferred from the first diamond layer to the second diamond layer. The first and second diamond layers have a first and a second end portion, respectively, facing each other with a space located therebetween. The first and second end portions have slopes epitaxially formed depending on the orientation of the substrate. The third diamond layer lies over the slopes and a section of the substrate that is located under the space.