The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Aug. 05, 2004
Tetsuya Kawamura, Saitama-ken, JP;
Tetsuya Kawamura, Saitama-ken, JP;
Toshiba Matsushita Display Technology Co., Ltd., Tokyo, JP;
Abstract
Poly-silicon semiconductor layerand dummy poly-silicon semiconductor layerare formed in insulation from each other on glass substrate. Gate insulation filmis formed on poly-silicon semiconductor layer, dummy poly-silicon semiconductor layerand glass substrate and covered with scanning and gate lines, which is overlapped with poly-silicon semiconductor layerand dummy poly-silicon semiconductor layer. Poly-silicon semiconductor layeris coupled with a reference potential to define capacitor Cc and also with scanning and gate lineto define capacitor Cd. Likewise, dummy poly-silicon semiconductor layeris coupled with a reference potential to define capacitor Cc and also with scanning and gate lineto define capacitor Cd. Capacitors Cc and Cd suppress increase in voltage applied to gate insulation filmbetween scanning and gate lineand poly-silicon semiconductor layerdue to electrostatic charges.