The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Sep. 05, 2003
Rafael Reif, Newton, MA (US);
Andy Fan, Cambridge, MA (US);
Rafael Reif, Newton, MA (US);
Andy Fan, Cambridge, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A method of forming a multi-layer semiconductor structure includes providing a first layer of a patterned copper bond film having a first predetermined thickness onto a first surface of a first semiconductor. The method further includes providing a second layer of a patterned copper bond film having a second predetermined thickness onto a first surface of a second semiconductor. The first and second semiconductor structures can be aligned, such that the first and second patterned copper bond films are disposed in proximity. A virtually seamless bond can be formed between the first and second patterned copper bond films to provide the first and second semiconductors as the multi-layer semiconductor structure.