The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Nov. 15, 2004
Applicant:
Chih-chin Chang, Hsin-Chu, TW;
Inventor:
Chih-Chin Chang, Hsin-Chu, TW;
Assignee:
AU Optronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a self-aligned low temperature polysilicon thin film transistor (LTPS TFT). First, active layers of a N type LTPS TFT (NLTPS TFT) and a P type LTPS TFT (PLTPS TFT) are formed on a substrate, and a gate insulating (GI) layer is formed on the substrate. Then, a source electrode, a drain electrode, and lightly doped drains (LDD) of the NLTPS TFT are formed. Further, gate electrodes of the NLTPS TFT and the PLTPS TFT are formed on the gate insulating layer. Finally, the gate electrode of the PLTPS TFT is utilized to form a source electrode and a drain electrode in the active layer of the PLTPS TFT.