The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Mar. 31, 2004
Kun-hong Chen, Taipei, TW;
Ming-yan Chen, Jhubei, TW;
Kun-Hong Chen, Taipei, TW;
Ming-Yan Chen, Jhubei, TW;
AU Optronics Corp., Hsinchu, TW;
Abstract
A method of forming a CMOS transistor on a substrate is provided, wherein the method requires only two implanting procedures to form all source/drain and light doped region. First, the source/drain of an NMOS transistor is formed by using a photoresist layer which covers up the source/drain of a PMOS transistor as a mask with a phosphorus dopant being implanted into. Next, the lightly doped region of an NMOS transistor and the source/drain of a PMOS transistor are formed by using a photoresist layer which covers up the source/drain of an NMOS transistor as well as the gate as masks with a boron dopant being implanted into. Of which, the dosage of the boron dopant is smaller than that of the phosphorus dopant.