The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Aug. 03, 2004
Woo Young Lee, Seoul, KR;
Suk Hee Han, Seoul, KR;
Joon Yeon Chang, Seoul, KR;
HI Jung Kim, Seoul, KR;
Jung MI Lee, Seoul, KR;
Jae Min Myoung, Koyang, KR;
Woo Young Lee, Seoul, KR;
Suk Hee Han, Seoul, KR;
Joon Yeon Chang, Seoul, KR;
Hi Jung Kim, Seoul, KR;
Jung Mi Lee, Seoul, KR;
Jae Min Myoung, Koyang, KR;
Korea Institute of Science and Technology, Seoul, KR;
Abstract
A 3 group–5 group compound ferromagnetic semiconductor, comprising one material 'A' selected from the group of Ga, Al and In and one material 'B' selected from the group consisting of N and P, wherein one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material ‘A’, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.