The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2006

Filed:

Dec. 13, 2002
Applicants:

Toshiatsu Nagaya, Kuwana, JP;

Takashi Yamamoto, Chiryu, JP;

Akira Fujii, Yokkaichi, JP;

Atsuhiro Sumiya, Hekinan, JP;

Hitoshi Shindo, Okazaki, JP;

Eturo Yasuda, Okazaki, JP;

Inventors:

Toshiatsu Nagaya, Kuwana, JP;

Takashi Yamamoto, Chiryu, JP;

Akira Fujii, Yokkaichi, JP;

Atsuhiro Sumiya, Hekinan, JP;

Hitoshi Shindo, Okazaki, JP;

Eturo Yasuda, Okazaki, JP;

Assignee:

Denso Corporation, Aichi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B 37/00 (2006.01); C04B 33/32 (2006.01);
U.S. Cl.
CPC ...
Abstract

This invention provides a stacked ceramic body that prevents reaction between components of dielectric layers and components of electrode layers of an unsintered stacked body during sintering and in which both components do not easily form a liquid phase, and a production method of such a stacked ceramic body. A print portionis formed on a green sheetcontaining lead by use of an electrode paste consisting of copper oxide as its main component. A desired number of print sheetsare stacked to give an unsintered stacked body. Degreasing is conducted in an atmosphere to degrease organic components. The print portionis subjected to reducing treatment in a reducing atmosphere containing hydrogen and is converted to a print portioncontaining copper as its main component. The unsintered stacked bodyis sintered in a reducing atmosphere. Dielectric layers containing lead and electrode layers for applying a voltage to the dielectric layers are alternately stacked, and an oxidation portion containing copper is formed in the proximity of a surface of the electrode layer. A thickness of the oxidation portion in a stacking direction is 0.5 to 2 μm and a copper content in the oxidation portion is 1 to 30 wt %.


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