The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Apr. 24, 2003
Applicants:
Masayoshi Takemi, Tokyo, JP;
Toru Ota, Tokyo, JP;
Shiro Ryochiku, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/08 (2006.01); H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor laser device includes an n type diffraction grating layer of n-InGaAsP on an n-InP substrate, and having through-holes periodically disposed alongside of one another in a laser optical waveguide direction, an n-InP layer containing S as a dopant impurity in a concentration of at least 1×10cm. The through holes are buried in the n-InP layer, and an active layer is disposed on both the n-InP layer and the diffraction grating layer through an n-InP cladding layer.