The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2006

Filed:

Sep. 14, 2001
Applicants:

Jin Kwang Kim, St. Louis Park, MN (US);

Andrew Sumika Huntington, Santa Barbara, CA (US);

Inventors:

Jin Kwang Kim, St. Louis Park, MN (US);

Andrew Sumika Huntington, Santa Barbara, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention creates oxide and air apertures in material systems, such as InP, that do not usually accommodate epitaxial incorporation of highly oxidizing materials, such as AlAs, of sufficient thickness to adequately provide optical as well as current aperturing. A composite structure of relatively slowly oxidizing layer or layers (e.g. AlInAs on InP) with a faster-oxidizing layer or layers (e.g. AlAs on InP) can be used to produce oxide and air apertures of various shapes and sizes, and to also increase the oxidation rate.


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