The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Jul. 08, 2004
Eui Suk Kim, Ichon-Shi, KR;
Eui Suk Kim, Ichon-Shi, KR;
Hynix Semicondutor Inc., Kyungki-Do, KR;
Abstract
The present invention discloses a method and device for preserving a word line pass bias using a ROM block in a NAND-type flash memory. The method for preserving the word line pass bias includes a step for closing a precharge transistor of a precharge circuit before the operation of a pass transistor for precharging a selected word line, by separately outputting from the ROM block a program precharge control signal transmitted to a group access signal generation circuit for outputting a group access signal and a program precharge control signal transmitted to a block word line, and synchronizing the signals in a synchronization circuit. Accordingly, time mismatching in the program and read operations of the NAND-type flash memory is prevented, and a predetermined voltage precharged to the selected block word line is precisely inputted to a specific cell and preserved.