The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Dec. 08, 2004
Andreas Sibrai, Krottendorf, AT;
Nikolay Tchamov, Tampere, FI;
Andreas Sibrai, Krottendorf, AT;
Nikolay Tchamov, Tampere, FI;
Dialog Semiconductor GmbH, Kirchheim/Teck-Nabern, DE;
Abstract
Methods to achieve low power consumption, high output amplitude and an improved high frequency stability, and high speed for voltage-controlled oscillators are disclosed These methods includes to provide a current mirror, a power supply voltage Vdd, two single-ended outputs, a lower layer of gain providing structure comprising cross-coupled transistors, an upper layer of gain providing structure, a control voltage, a pair of capacitors to block a DC-connection to the gates of said cross-coupled transistors, a pair of resistors, and an LC-tank. Important steps of these methods include to set the time instances when said transistors of lower layer of gain providing structure open and close, to shut-down the transistors of lower layer of gain providing structure as soon as the energy required to keep the oscillations in said LC-tank is secured, to add additional gain in the amplification loop; and to pump-out charges of the channels of said transistors of said lower layer gain providing structure.