The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Apr. 02, 2003
Hideki Iwaki, Ibaraki, JP;
Yutaka Taguchi, Takatsuki, JP;
Tetsuyosi Ogura, Settsu, JP;
Yasuhiro Sugaya, Toyonaka, JP;
Toshiyuki Asahi, Osaka, JP;
Tousaku Nishiyama, Nara, JP;
Yoshinobu Idogawa, Sakai, JP;
Hideki Iwaki, Ibaraki, JP;
Yutaka Taguchi, Takatsuki, JP;
Tetsuyosi Ogura, Settsu, JP;
Yasuhiro Sugaya, Toyonaka, JP;
Toshiyuki Asahi, Osaka, JP;
Tousaku Nishiyama, Nara, JP;
Yoshinobu Idogawa, Sakai, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor built-in millimeter-wave band module includes: an insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a high thermal conductivity substrate made of a dielectric material having thermal conductivity higher than the insulating substrate and laminated on one surface of the insulating substrate; a plurality of wiring patterns formed on the high thermal conductivity substrate and the insulating substrate; a semiconductor device operating at millimeter-wave band, which is arranged inside of the insulating substrate, is packaged on the high thermal conductivity substrate in a face-up manner, and is connected electrically with the wiring patterns; and a distributed constant circuit element and an active element provided on the semiconductor device. In this module, a void is provided inside of the insulating substrate and in the vicinity of a surface of the distributed constant circuit element and the active element. With this configuration, heat from the semiconductor device operating at a millimeter-wave band can be dissipated effectively and the semiconductor and other circuit components can be packaged with high density.