The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Oct. 25, 2004
Carl P. Babcock, Campbell, CA (US);
Jayendra D. Bhakta, Sunnyvale, CA (US);
Carl P. Babcock, Campbell, CA (US);
Jayendra D. Bhakta, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A film stack for forming shallow trench isolation among transistors and other devices on a semiconductor substrate is provided, including a plurality of light absorbing layers alternating between a layer of SiON and a layer of SiOand having a combined extinction coefficient >0.5. As reflected light interacts with the light absorbing layers, a substantial amount of light is absorbed therein thereby blocking such reflected light from negatively interfering with patterning of the photoresist during photo-lithography. Following patterning of the photoresist, isolation trenches may be formed in the semiconductor substrate by etching through the light absorbing layers and into the semiconductor substrate in accordance with the pattern formed on the photoresist.