The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Oct. 08, 2002
BO Sung Kim, Seoul, KR;
Kwan-wook Jung, Suwon, KR;
Wan-shick Hong, Seoul, KR;
Sang-gab Kim, Seoul, KR;
Mun-pyo Hong, Seongnam, KR;
Bo Sung Kim, Seoul, KR;
Kwan-Wook Jung, Suwon, KR;
Wan-Shick Hong, Seoul, KR;
Sang-Gab Kim, Seoul, KR;
Mun-Pyo Hong, Seongnam, KR;
Abstract
A gate wire is formed on a substrate. Next, after forming a gate insulating film, a semiconductor layer and an ohmic contact layer subsequently are formed thereon. Next, a data wire is formed. Next, a passivation layer and an organic insulating film are deposited, and patterned to form contact holes for exposing the drain electrode, the gate pad and the data pad, respectively. Here, the organic insulating film around the contact holes is formed thinner than that in the other portions. Next, the organic insulating film around the contact holes is removed by an ashing process to expose the borderline of the passivation layer in the contact holes, thereby removing an under-cut. Then, a pixel electrode, an assistant gate pad and an assistant data pad respectively connected to the drain electrode, the gate pad and the data pad are formed.