The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2006

Filed:

Feb. 26, 2004
Applicant:

Horii Hideki, Seoul, KR;

Inventor:

Horii Hideki, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/18 (2006.01); H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Storage cells for a phase change memory device and phase change memory devices are provided that include a first phase change material pattern and a first high-resist phase change material pattern on the first phase change material pattern. The first high-resist phase change material pattern has a higher resistance than the first phase change material pattern. Methods of fabricating such storage cells and/or memory devices are also provided.


Find Patent Forward Citations

Hideki, Horii. (2006). Phase change storage cells for memory devices, memory devices having phase change storage cells and methods of forming the same (U.S. Patent No. 7061013). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7061013

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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