The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Dec. 04, 2003
Sougo Ohta, Kobe, JP;
Mikiya Uchida, Kyoto, JP;
Yoshiyuki Matsunaga, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A solid-state imaging device that achieves a reduction in variations appearing on a reproducing screen is provided. The solid-state imaging device includes a plurality of pixel cells that are laid out in matrix form on a semiconductor substrate and a driving unit that is provided to drive the plurality of pixel cells. Each of the plurality of pixel cells includes a photodiode, a MOS transistor, and an element isolating portionthat is formed so that the photodiode and the MOS transistor are isolated from each other. The element isolating portionis formed of a STI (Shallow Trench Isolation) that is a grooved portion of the semiconductor substrate. In the semiconductor substrate, a STI leakage stopperin which an impurity of a conductive type opposite to a conductive type of source/drain regions in the MOS transistor is introduced is formed to enclose side walls and a bottom face of the element isolating portion