The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Apr. 07, 2004
Min-yong Lee, Ichon-shi, KR;
Min-Yong Lee, Ichon-shi, KR;
Hynix Semiconductor Inc., Ichon-shi, KR;
Abstract
The present invention relates to a method for forming a contact in a semiconductor device. The method includes the steps of: forming a P-type source/drain junction in a substrate; forming an inter-layer insulation layer on the substrate; forming a contact hole exposing at least one portion of the P-type source/drain junction by etching the inter-layer insulation layer; forming a plug ion implantation region by implanting boron fluoride ions into the exposed portion of the P-type source/drain junction, the boron fluoride ion having the less bonding number of fluorine thanBF; performing an activation annealing process for activating dopants implanted into the plug ion implantation region; and forming a contact connected to the P-type source/drain junction through the contact hole.