The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Jul. 03, 2003
In-haeng Lee, Kyoungki-do, KR;
Yoon-jik Lee, Kyoungki-do, KR;
In-Haeng Lee, Kyoungki-do, KR;
Yoon-Jik Lee, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
The present invention provides a method for forming a metal silicide layer in an active area of the semiconductor device. The method for forming the metal silicide layer includes: forming a source/drain junction area on a silicon substrate; forming an attack protection layer on the source/drain junction area, wherein the attack protection layer is electrically conductive and prevents a silicon substrate attack caused by chlorine (Cl) gas; forming a titanium (Ti) layer over the attack protection layer through a low pressure chemical vapor deposition (LPCVD) process using a source gas of TiCl; and diffusing the Ti layer into the attack protection layer to thereby form a metal silicide layer.