The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Sep. 30, 2003
Rick W. Glew, Manotick, CA;
Ian B. Betty, Ottawa, CA;
Jonathan Greenspan, Nepean, CA;
Bookham Technology, PLC, Abingdon, GB;
Abstract
A method for integrating optical devices in a single growth step by utilizing a combination of Selective Area Growth and Etch (SAGE) is provided. An first device is formed between a set of oxide-masked regions, whilst a second device is formed in an adjacent planar region. By use of Selected Area Growth and Etch (SAGE), in which the growth between the oxide-masked regions is greater than the growth in the planar region, and in which the etch rate in the area between the oxide-masked regions is substantially the same as that in the planar region, the number of active quantum layers for the first device are formed between the oxide-masked regions, and a different number of layers for the second device is formed in the planar region.