The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2006

Filed:

Dec. 10, 2003
Applicants:

Stephen S. Furkay, South Burlington, VT (US);

David V. Horak, Essex Junction, VT (US);

Chung H. Lam, Peekskill, NY (US);

Hon-sum P. Wong, Chappaqua, NY (US);

Inventors:

Stephen S. Furkay, South Burlington, VT (US);

David V. Horak, Essex Junction, VT (US);

Chung H. Lam, Peekskill, NY (US);

Hon-Sum P. Wong, Chappaqua, NY (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 27/00 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A storage cell that may be a memory cell, and integrated circuit (IC) chip including an array of the memory cells and a method of forming the IC. Each storage cell is formed between a top an bottom electrode. Each cell includes a phase change layer that may be a chalcogenide and in particular a germanium (Ge), antimony (Sb), tellurium (Te) or GST layer. The cell also includes a stylus with the apex of the stylus contacting the GST layer. The apex may penetrate the GST layer


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