The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Apr. 26, 2004
Frederick A. Perner, Palo Alto, CA (US);
Thomas C. Anthony, Sunnyvale, CA (US);
Robert C Walmsley, Palo Alto, CA (US);
Lung Tran, Sarratoga, CA (US);
Frederick A. Perner, Palo Alto, CA (US);
Thomas C. Anthony, Sunnyvale, CA (US);
Robert C Walmsley, Palo Alto, CA (US);
Lung Tran, Sarratoga, CA (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A method of performing a thermally assisted write operation on a selected two conductor spin valve memory (SVM) cell having a material wherein the coercivity is decreased upon an increase in temperature. In a particular embodiment, a first write magnetic field is established by a first write current flowing from a first voltage potential to a second voltage potential as applied to the first conductor. A second write magnetic field is established by a second write current flowing from a third voltage potential to a fourth voltage potential as applied to the second conductor. The voltage potential of the first conductor is greater than the voltage potential of the second conductor. As a result, a third current, flows from the first conductor through the SVM cell to the second conductor. The SVM cell has an internal resistance such that the flowing current generates heat within the SVM cell. As the SVM cell is self heated, the coercivity of the SVM cell falls below the combined write magnetic fields.