The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Mar. 01, 2004
Cheng-yen Huang, Hsinchu, TW;
Cheng-Yen Huang, Hsinchu, TW;
Faraday Technology Corp., Hsin-Chu, TW;
Abstract
A memory unit and memory module using the same. The memory module at least has a first memory region with a plurality of memory units. In each memory unit, first and access transistors each have a first terminal coupled to one bit line pair respectively. A latch node is coupled between second terminals of the first and second access transistor to latch data. An OR gate has a first input terminal coupled to a word line, an output terminal coupled to gates of the first and second access transistor, and a second input terminal. The second input terminals of the OR gates in all memory units are coupled to a flush line. Invalidation information is written to the latch nodes in the memory units from the bit line pair when the flush line is activated during a flush operation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile