The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2006

Filed:

Dec. 09, 2004
Applicants:

Masayoshi Hirao, Fukuoka, JP;

Katsumi Satou, Tokyo, JP;

Shigeo Tooi, Tokyo, JP;

Kazushige Matsuo, Fukuoka, JP;

Inventors:

Masayoshi Hirao, Fukuoka, JP;

Katsumi Satou, Tokyo, JP;

Shigeo Tooi, Tokyo, JP;

Kazushige Matsuo, Fukuoka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A switching chip using silicon as the base material is located on the upper surface of a cooling mechanism formed of a heat sink, an insulating substrate and a conductive plate, with a first conductive layer sandwiched in between. Further, a diode chip having a smaller area than a cathode electrode and using a wide gap semiconductor as the base material is located on the cathode electrode which has a smaller area than an anode electrode, with a second conductive layer sandwiched in between. A closed container encloses every structural component except an exposed portion of a bottom surface in the interior space.


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Hirao, Masayoshi. (2006). Semiconductor device with semiconductor chip formed by using wide gap semiconductor as base material (U.S. Patent No. 7057298). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7057298

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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