The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2006

Filed:

Dec. 16, 2002
Applicants:

Naoyuki Yamabayashi, Osaka, JP;

Yoshiki Kuhara, Osaka, JP;

Inventors:

Naoyuki Yamabayashi, Osaka, JP;

Yoshiki Kuhara, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photodiode (PD chip) includes a substrate, an absorption layer, a p-n junction in the absorption layer, a passivation film for protecting the end of the p-n junction, a p-electrode, and an n-electrode. The passivation film is covered with a protective layer composed of an insulative resin and having a thickness larger than that of the passivation film such that the passivation film of the PD chip fixed to the Si wafer and hence the p-n junction are not damaged or contaminated when an Si wafer including a number of horizontally and vertically arranged chip units, each having a V-groove for fixing an optical fiber, a marker, and a metallized pattern, is diced. Thus, a low-cost optical receiver module that does not generate dark current can be produced.


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