The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2006

Filed:

Sep. 29, 2003
Applicants:

Jeffrey J. Zarnowski, McGraw, NY (US);

Samuel D. Ambalavanar, Rochester, NY (US);

Michael E. Joyner, Cortland, NY (US);

Ketan V. Karia, Cortland, NY (US);

Inventors:

Jeffrey J. Zarnowski, McGraw, NY (US);

Samuel D. Ambalavanar, Rochester, NY (US);

Michael E. Joyner, Cortland, NY (US);

Ketan V. Karia, Cortland, NY (US);

Assignee:

Panavision Imaging LLC, New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 40/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A solid state imager with pixels arranged in columns and rows has the pixels are configured into groups of at least a first pixel and a second pixel, each said group sharing a pixel output transistor having a sense electrode and an output electrode and a reset transistor having a gate coupled to receive a reset signal and an output coupled to the sense electrode of the associated shared pixel output transistor. Each of the pixels has a photosensitive element whose output electrode is coupled to the sense electrode of the shared pixel output transistor and a gate electrode coupled to receive respective first and second pixel gating signals. This configuration reduces the number of FETs to two transistors for each pair of pixels, and also can achieve true correlated double sampling correction of FPN.


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