The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Aug. 04, 2005
Jae Hoon Shim, Seoul 121-836, KR;
Sung Min Kim, Seoul 157-886, KR;
Bong OK Kim, Seoul 143-839, KR;
NO Gil Park, Seoul 122-080, KR;
MI Young Kwak, Seoul 135-953, KR;
Young Kwan Kim, Kyungki-do 430-010, KR;
Jae Hoon Shim, Seoul 121-836, KR;
Sung Min Kim, Seoul 157-886, KR;
Bong Ok Kim, Seoul 143-839, KR;
No Gil Park, Seoul 122-080, KR;
Mi Young Kwak, Seoul 135-953, KR;
Young Kwan Kim, Kyungki-do 430-010, KR;
Other;
Abstract
Provided is a method for fabricating an organic semiconductor transistor having an organic polymeric gate insulating layer. The method includes forming an organic gate insulating layer on a substrate by a vapor deposition method using organic monomer sources, and causing a polymerization reaction to occur in the organic gate insulating layer to complete an organic polymeric gate insulating layer. Since the vapor deposition method, which is a low-temperature dry-type technique, is employed, the organic polymeric gate insulating layer can be uniformly formed on a large-area substrate by a simplified in-situ process.