The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2006

Filed:

Jul. 17, 2003
Applicants:

Tetsuhiro Iwai, Kasuga, JP;

Kiyoshi Arita, Fukuoka, JP;

Inventors:

Tetsuhiro Iwai, Kasuga, JP;

Kiyoshi Arita, Fukuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a plasma processing apparatus for plasma-processing a silicon waferto which a protective filmis stuck in a state that the silicon waferis held by a first electrodeby electrostatic absorption and is being cooled, the top surfaceof the first electrodeconsists of a top surface central area A that is inside a boundary line Pthat is distant inward by a prescribed length from the outer periphery Pof the silicon waferand in which the conductor is exposed, and a ring-shaped top surface peripheral area B that surrounds the top surface central area A and in which the conductor is covered with an insulating coatingThis structure makes it possible to hold the silicon waferby sufficient electrostatic holding force by bringing the silicon waferinto direct contact with the conductor and to increase the cooling efficiency by virtue of heat conduction from the silicon waferto the first electrode


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