The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7056647 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 06, 2006

Filed:

Dec. 30, 2003
Applicants:

Sung Mun Jung, Gyeonggi-do, KR;

Chang Hun Han, Gyeonggi-do, KR;

Inventors:

Sung Mun Jung, Gyeonggi-do, KR;

Chang Hun Han, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A flash memory device having a reduced source resistance and a fabrication method thereof are disclosed. An example flash memory includes a cell region including a gate, a source line, a drain contact, and a cell trench area for device isolation on a silicon substrate. The example flash memory also includes a peripheral region positioned around the cell region and including a subsidiary circuit and a peripheral trench area for device isolation on the silicon substrate, wherein the cell trench area of the cell region is shallower than the peripheral trench area of the peripheral region.


Find Patent Forward Citations

Jung, Sung. (2006). Flash memory with reduced source resistance and fabrication method thereof (U.S. Patent No. 7056647). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7056647

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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