The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7053672 B1

PDF
Full Text
Expired
Date of Patent:
May. 30, 2006

Filed:

Jun. 28, 2004
Applicant:

Jun Gi Choi, Kyoungki-do, KR;

Inventor:

Jun Gi Choi, Kyoungki-do, KR;

Assignee:

Hynix Semiconductor Inc., Kyoungki-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention discloses a skew detection device which can detect a skew of a transistor changed due to a driving voltage, a size and a process variable. The skew detection device includes a first potential level generator for outputting a first voltage, a second potential level generator for outputting a second voltage, a first level shifter for receiving the first voltage and outputting a first shift voltage, a second level shifter for receiving the second voltage and outputting a second shift voltage, and a comparator for comparing the first shift voltage with the second shift voltage. The first voltage is determined according to a drain-source current of a first MOS transistor operated in a linear region, and the second voltage is determined according to a drain-source current of a second MOS transistor operated in a saturation region.


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