The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Sep. 14, 2004
Martin Verhoeven, Radebeul, DE;
Martin Verhoeven, Radebeul, DE;
Infineon Technologies AG, Munich, DE;
Abstract
Memory cells are formed by preferably cylindrical recesses at the main surface of a semiconductor substrate, containing a memory layer sequence at sidewalls and a gate electrode and being provided with upper and lower source/drain regions connected in columns to first and second bit lines. Word lines are arranged above the first and second bit lines and connected to rows of gate electrodes. The vertical transistor structure facilitates a further shrinking of the cells and enables a required minimum effective channel length.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile