The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Feb. 17, 2004
Kenji Hakozaki, Fukuyama, JP;
Kenichi Tanaka, Fukuyama, JP;
Kenji Hakozaki, Fukuyama, JP;
Kenichi Tanaka, Fukuyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A non-volatile semiconductor memory device comprising: a first conductive type well formed within a semiconductor substrate; and a memory cell having a gate insulating film, a floating gate, an insulating film, a control gate and a pair of source/drain region, the gate insulating film, the floating gate, the insulating film, the control gate being layered in this order above the first conductive type well, the pair of source/drain regions being made up of second conductive type diffusion layers and formed within the first conductive type well, wherein the source region is electrically connected to the first conductive type well.