The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Nov. 12, 2003
Peter Micah Sandvik, Guilderland, NY (US);
Vinayak Tilak, Watervliet, NY (US);
Jesse Tucker, Niskayuna, NY (US);
Stanton Earl Weaver, Northville, NY (US);
David Mulford Shaddock, Troy, NY (US);
Jonathan Lloyd Male, Schoharie, NY (US);
John Patrick Lemmon, Schoharie, NY (US);
Mark Allen Woodmansee, Schenectady, NY (US);
Venkatesan Manivannan, Rexford, NY (US);
Deborah Ann Haitko, Schenectady, NY (US);
Peter Micah Sandvik, Guilderland, NY (US);
Vinayak Tilak, Watervliet, NY (US);
Jesse Tucker, Niskayuna, NY (US);
Stanton Earl Weaver, Northville, NY (US);
David Mulford Shaddock, Troy, NY (US);
Jonathan Lloyd Male, Schoharie, NY (US);
John Patrick Lemmon, Schoharie, NY (US);
Mark Allen Woodmansee, Schenectady, NY (US);
Venkatesan Manivannan, Rexford, NY (US);
Deborah Ann Haitko, Schenectady, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.