The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2006

Filed:

Jul. 13, 2001
Applicants:

John R. Tuttle, Frisco, CO (US);

Rommel Noufi, Golden, CO (US);

Falah S. Hasoon, Arvada, CO (US);

Inventors:

John R. Tuttle, Frisco, CO (US);

Rommel Noufi, Golden, CO (US);

Falah S. Hasoon, Arvada, CO (US);

Assignee:

Midwest Research Institute, Kansas City, MO (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/336 (2006.01); H01L 31/392 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin-film solar cell () is provided. The thin-film solar cell () comprises a flexible metallic substrate () having a first surface and a second surface. A back metal contact layer () is deposited on the first surface of the flexible metallic substrate (). A semiconductor absorber layer () is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer () forms a heterojunction structure and a grid contact () deposited on the heterjunction structure. The flexible metal substrate () can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (), depositing a semiconductor absorber layer () on the aluminum substrate (), and insulating the aluminum substrate () from the semiconductor absorber layer () to inhibit reaction between the aluminum substrate () and the semiconductor absorber layer ().


Find Patent Forward Citations

Loading…