The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Jun. 27, 2003
Applicants:
Li-mei Chen, Hsinchu, TW;
Chao-jen Wang, Kaohsiung, TW;
Chien-hsien Yu, Miaoli, TW;
Jen-po Lin, Pingtung, TW;
Inventors:
Li-Mei Chen, Hsinchu, TW;
Chao-Jen Wang, Kaohsiung, TW;
Chien-Hsien Yu, Miaoli, TW;
Jen-Po Lin, Pingtung, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/468 (2006.01);
U.S. Cl.
CPC ...
Abstract
A new dielectric material composition with high dielectric constant and low dielectric loss, which includes a quaternary metallic oxide having a pervoskite structure and represented by a general formula, BaMTiMO. It is suitable for Gbit memory devices, embedded capacitance devices in multilayered structures, and modulable capacitors for high frequency devices.