The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
May. 14, 2004
Applicant:
Koji Shimada, Okayama, JP;
Inventor:
Koji Shimada, Okayama, JP;
Assignee:
Sharp Kabushiki kaisha, Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device is formed using a BARC (bottom antireflective coating) that minimizes the formation of fences around the via holes. The BARC is formed from an organic antireflective layer over an inorganic antireflective layer. The organic antireflective layer also covers the internal surface of the via hole. Subsequent treatment with dilute aqueous or organic solvent leaves a thinned organic antireflective layer and a plug of organic material at the bottom of the via hole. The resulting semiconductor is free from the via hole fence formation that characterizes the conventional art technology.