The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Feb. 12, 2004
Takefumi Konishi, Hiroshima, JP;
Kazuhiro Kawajiri, Kanagawa, JP;
Takefumi Konishi, Hiroshima, JP;
Kazuhiro Kawajiri, Kanagawa, JP;
Innotech Corporation, Kanagawa, JP;
Abstract
A method for producing a solid-state imaging device comprising a plurality of unit pixel sections, including a first unit pixel section, is provided. The method includes the steps of forming a first conductivity type well region of the first unit pixel section on a second conductivity type semiconductor layer provided on a first conductivity type semiconductor layer, the first conductivity type well region including a light receiving region for generating charges corresponding to an amount of light incident thereon and a charge transfer region capable of transferring the charges; and generating a charge accumulation region, for accumulating the charges generated in the light receiving region, in the charge transfer region. The step of forming the first conductivity type well region includes the step of implanting impurities such that the light receiving region and the charge transfer region in the first conductivity type well region have a substantially uniform impurity concentration.