The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Dec. 20, 2002
Raffaele Zambrano, Viagrande, IT;
Cesare Artoni, Augusta, IT;
Raffaele Zambrano, Viagrande, IT;
Cesare Artoni, Augusta, IT;
STMicroelectronics, S.R.L., Agrate Brianza (MI), IT;
Abstract
A memory cell of a stacked type is formed by a MOS transistor and a ferroelectric capacitor. The MOS transistor is formed in an active region of a substrate of semiconductor material and comprises a conductive region. The ferroelectric capacitor is formed on top of the active region and comprises a first and a second electrodes separated by a ferroelectric region. A contact region connects the conductive region of the MOS transistor to the first electrode of the ferroelectric capacitor. The ferroelectric capacitor has a non-planar structure, formed by a horizontal portion and two side portions extending transversely to, and in direct electrical contact with, the horizontal portion.