The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Mar. 24, 2003
Günter Schmid, Hemhofen, DE;
Marcus Halik, Erlangen, DE;
Hagen Klauk, Erlangen, DE;
Christine Dehm, Nürnberg, DE;
Thomas Haneder, Dachau, DE;
Thomas Mikolajick, Dresden, DE;
Günter Schmid, Hemhofen, DE;
Marcus Halik, Erlangen, DE;
Hagen Klauk, Erlangen, DE;
Christine Dehm, Nürnberg, DE;
Thomas Haneder, Dachau, DE;
Thomas Mikolajick, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The semiconductor memory cell is characterized in that at least one modulation region is provided between a first gate electrode of the gate electrode configuration and the insulation region, and in that the modulation region has or is formed from a material or modulation material having electrical and/or further material properties that can be modulated in a controllable manner between at least two states in such a way that, in accordance with these states of the modulation material or of the modulation region, the channel region can be influenced electromagnetically, in particular for a given electrical potential difference between the first gate electrode and the source/drain regions.