The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Jan. 07, 2004
Applicants:
Junichi Nakamura, Kashiba, JP;
Kazuaki Sasaki, Osaka, JP;
Inventors:
Junichi Nakamura, Kashiba, JP;
Kazuaki Sasaki, Osaka, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for producing a III-V group compound semiconductor layer comprises the steps of: forming a first III-V group compound semiconductor layer on a substrate in a reaction chamber; and supplying a III group material gas to the reaction chamber before or after the step of forming the first III-V group compound semiconductor layer to prevent re-evaporation of the III group gas in the reaction chamber.
Nakamura, Junichi. (2006). Method for producing iii-iv group compound semiconductor layer, method for producing semiconductor light emitting element, and vapor phase growing apparatus (U.S. Patent No. 7049212). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7049212
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile