The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Oct. 28, 2004
Woo-soon Jang, Seoul, KR;
Joon Kim, Seoul, KR;
Eun-kuk Chung, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
In a method of manufacturing a semiconductor device including independent gate patterns separated from each other, an active region is defined by forming a field region on a substrate. A gate oxide layer and a polysilicon layer are formed on the substrate. A preliminary gate pattern is formed by partially removing the polysilicon layer along a first direction by a first etching process. A spacer is formed along a side surface of the preliminary gate pattern. A number of separated gate patterns is formed by partially removing the preliminary gate pattern along a second direction crossing the first direction by a second etching process. The gate patterns overlap with the active regions and are separated from each other. Therefore, the overlap margin is increased, and the polysilicon layer is prevented from being over-etched when it is patterned to form the gate pattern.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile