The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2006
Filed:
Aug. 10, 2004
David Russell Hoag, Walpole, MA (US);
Timothy Edward Boles, Tyngsboro, MA (US);
James Joseph Brogle, Woburn, MA (US);
David Russell Hoag, Walpole, MA (US);
Timothy Edward Boles, Tyngsboro, MA (US);
James Joseph Brogle, Woburn, MA (US);
M/A-Com, Lowell, MA (US);
Abstract
A heterojunction P-I-N diode switch comprises a first layer of doped semiconductor material of a first doping type, a second layer of doped semiconductor material of a second doping type and a substrate on which is disposed the first and second layers. An intrinsic layer of semiconductor material is disposed between the first layer and second layer. The semiconductor material composition of at least one of the first layer and second layer is sufficiently different from that of the intrinsic layer so as to form a heterojunction therebetween, creating an energy barrier in which injected carriers from the junction are confined by the barrier, effectively reducing the series resistance within the I region of the P-I-N diode and the insertion loss relative to that of homojunction P-I-N diodes.